transistor 2N3904 datasheet Samsung Diodes Inc. Valvo GmbH
2N3904 Spec Sheet. Web 2n3904 ft 250 300 − − mhz output capacitance (vcb = 5.0 vdc, ie = 0, f = 1.0 mhz) cobo − 4.0 pf input capacitance (veb = 0.5 vdc, ic = 0, f = 1.0 mhz) cibo − 8.0 pf input impedance (ic = 1.0 madc, vce = 10. General purpose transistors (npn silicon).
transistor 2N3904 datasheet Samsung Diodes Inc. Valvo GmbH
Silicon epitaxial planar npn transistor. This device is designed as a general−purpose amplifier and switch. General purpose transistors (npn silicon). The useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier. The useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier. Web 2n3904 ft 250 300 − − mhz output capacitance (vcb = 5.0 vdc, ie = 0, f = 1.0 mhz) cobo − 4.0 pf input capacitance (veb = 0.5 vdc, ic = 0, f = 1.0 mhz) cibo − 8.0 pf input impedance (ic = 1.0 madc, vce = 10.
The useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier. General purpose transistors (npn silicon). The useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier. The useful dynamic range extends to 100 ma as a switch and to 100 mhz as an amplifier. This device is designed as a general−purpose amplifier and switch. Silicon epitaxial planar npn transistor. Web 2n3904 ft 250 300 − − mhz output capacitance (vcb = 5.0 vdc, ie = 0, f = 1.0 mhz) cobo − 4.0 pf input capacitance (veb = 0.5 vdc, ic = 0, f = 1.0 mhz) cibo − 8.0 pf input impedance (ic = 1.0 madc, vce = 10.
